BSM-150GB120DN2 SEMIKRON IGBT MODULE

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260.00 د.إ

Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 210 A
Gate-Emitter Leakage Current: 320 nA
Pd – Power Dissipation: 1.25 kW
Package/Case: Half Bridge2
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 30 mm
Length: 106.4 mm
Technology: Si
Width: 61.4 mm
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Unit Weight: 363.080 g

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