GW60V60DF TO-3P

Features
? Maximum junction temperature: TJ = 175 ?C
? Tail-less switching off
? VCE(sat) = 1.85 V (typ.) @ IC = 60 A
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Very fast soft recovery antiparallel diode
Applications
? Photovoltaic inverters
? Uninterruptible power supply
? Welding
? Power factor correction
? Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.