WFP75N75

Features
? RDS(on) (Max 0.017 ? )@VGS=10V
? Gate Charge (Typical 85nC)
? Improved dv/dt Capability, High Ruggedness
? 100% Avalanche Tested
? Maximum Junction Temperature Range (175?C)
General Description
This Power MOSFET is produced using Wisdom?s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.