10n120bnd

72.00 د.إ120.00 د.إ
ECAD Module
CategoriesDiscrete Semiconductor Products
ManufacturerFairchild/ON Semiconductor
PackagingTube/Rail
StatusNot For New Designs
IGBT TypeNPT
VCEO Maximum Collector-Emitter Breakdown Voltage1200V
Maximum Current Collector35A
Pulsed Collector Current80A
Collector-emitter saturation voltage(Max)2.7V @ 15V, 10A
Maximum Power Dissipation298W
Total Switching Energy(Ets)850?J (on), 800?J (off)
Input TypeStandard
Gate Charge100nC
Turn-on and Turn-off delay time23ns/165ns
Testing Conditions960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr)70ns
Temperature Range – Operating-55?C to 150?C (TJ)
MountingThrough Hole
Case / PackageTO-247
Win Source Part Number197246-10N120BND
PopularityMedium
Fake Threat In the Open Market28 pct.
Supply and Demand StatusLimited

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