17N40 TO-220

Features
? 16 A, 400 V, RDS(on) = 270 m? (Max.) @ VGS = 10 V,
ID = 8.0 A
? Low Gate Charge (Typ. 45 nC)
? Low Crss (Typ. 30 pF)
? 100% Avalanche Tested

Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor?s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.