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17N40 TO-220

42.00 د.إ70.00 د.إ

? 16 A, 400 V, RDS(on) = 270 m? (Max.) @ VGS = 10 V,
ID = 8.0 A
? Low Gate Charge (Typ. 45 nC)
? Low Crss (Typ. 30 pF)
? 100% Avalanche Tested

This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor?s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp

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