17P06 TO 220

General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild?s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
? -17A, -60V, RDS(on) = 0.12? @VGS = -10 V
? Low gate charge ( typical 21 nC)
? Low Crss ( typical 80 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
? 175?C maximum junction temperature rating