2N3905 TO-92 IC

Specifications

Product Attribute	Attribute Value	Search Similar

Product Category:	Bipolar Transistors – BJT
RoHS:	N
Mounting Style:	Through Hole
Package/Case:	TO-92-3
Transistor Polarity:	PNP
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	5 V
Maximum DC Collector Current:	0.2 A
Pd – Power Dissipation:	625 mW
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 150 C
DC Current Gain hFE Max:	150
Height:	5.33 mm
Length:	5.2 mm
Technology:	Si
Width:	4.19 mm

Continuous Collector Current:	0.2 A
DC Collector/Base Gain hFE Min:	30 at 100 uA, 1 V, 40 at 1 mA, 1 V, 50 at 10 mA, 1 V, 30 at 50 mA, 1 V, 15 at 100 mA, 1 V
Product Type:	BJTs – Bipolar Transistors
Subcategory:	Transistors
Unit Weight:	201 mg