2N5193 IC

8.00 د.إ
  • Type Designator: 2N5193
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 40 V
  • Maximum Collector-Emitter Voltage |Vce|: 40 V
  • Maximum Emitter-Base Voltage |Veb|: 4 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 ?C
  • Transition Frequency (ft): 2 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 25
  • Noise Figure, dB: –
  • Package: TO126

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