- Type Designator: 2N5493
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 50 W
- Maximum Collector-Base Voltage |Vcb|: 75 V
- Maximum Collector-Emitter Voltage |Vce|: 65 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 7 A
- Max. Operating Junction Temperature (Tj): 150 ?C
- Transition Frequency (ft): 0.8 MHz
- Forward Current Transfer Ratio (hFE), MIN: 20
- Noise Figure, dB: –
- Package: TO220
FEATURES
? Schottky Barrier Chip
? Guard Ring Die Construction for Transient Protection
? Low Power Loss, High Efficiency
? High Surge Capability
? High Current Capability and Low Forward Voltage Drop
? For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications