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2N5493 TO220 IC

12.00 د.إ
  • Type Designator: 2N5493
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 50 W
  • Maximum Collector-Base Voltage |Vcb|: 75 V
  • Maximum Collector-Emitter Voltage |Vce|: 65 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 7 A
  • Max. Operating Junction Temperature (Tj): 150 ?C
  • Transition Frequency (ft): 0.8 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20
  • Noise Figure, dB: –
  • Package: TO220

FEATURES
? Schottky Barrier Chip
? Guard Ring Die Construction for Transient Protection
? Low Power Loss, High Efficiency
? High Surge Capability
? High Current Capability and Low Forward Voltage Drop
? For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications

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