Darlington silicon power transistors are designed for general-purpose amplifier
and low speed switching applications.
Features:
? Collector-Emitter Sustaining Voltage
VCEO(sus) = 80V (Minimum).
? Collector-Emitter Saturation Voltage
VCE(sat) = 2.0V (Maximum) at IC = 5.0A.
? DC Current Gain hFE = 2500 (Typical) at IC = 4.0A