2SC627 METAL

Product specifications
Type Transistor Silicon NPN
EAN 5052406520328
Case TO39
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 700m
C(ob) (F) 6.0p
Derate (Amb) (W/?C) 4.8m
hfe 360
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 20.M
@VCE (test) (V) 10
Oper. Temp (?C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number 3-12
Pkg Style TO-5
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.7 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 ?C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 360

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