- Type Designator: 2SJ183
- Type of Transistor: MOSFET
- Type of Control Channel: P -Channel
- Maximum Power Dissipation (Pd): 20 W
- Maximum Drain-Source Voltage |Vds|: 60 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 5 A
- Maximum Junction Temperature (Tj): 150 ?C
- Rise Time (tr): 30 nS
- Drain-Source Capacitance (Cd): 270 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.35 Ohm
- Package: SC64