Untitled-design-2021-01-04T154137.194.png

BD241C DIP IC

Product Category:	Bipolar Transistors – BJT
RoHS:	N
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	80 V
Collector- Base Voltage VCBO:	90 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1.2 V
Maximum DC Collector Current:	3 A
Pd – Power Dissipation:	40 W
Gain Bandwidth Product fT:	3 MHz
Minimum Operating Temperature:	– 65 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Height:	9.28 mm
Length:	10.28 mm
Technology:	Si
Width:	4.82 mm
Brand:	ON Semiconductor
Continuous Collector Current:	3 A
DC Collector/Base Gain hFE Min:	25
Product Type:	BJTs – Bipolar Transistors
QTY	12
Subcategory:	Transistors
Unit Weight:	6 g