BD241C DIP IC

12.00 د.إ
Bipolar Transistors – BJT
RoHS:N
Through Hole
TO-220-3
NPN
Single
80 V
90 V
5 V
1.2 V
3 A
40 W
3 MHz
– 65 C
+ 150 C
Tube
Height:9.28 mm
Length:10.28 mm
Technology:Si
Width:4.82 mm
Brand:ON Semiconductor
Continuous Collector Current:3 A
DC Collector/Base Gain hFE Min:25
Product Type:BJTs – Bipolar Transistors
QTY12
Subcategory:Transistors
Unit Weight:6 g

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