- Type Designator: BD246B
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 80 W
- Maximum Collector-Base Voltage |Vcb|: 90 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 15 A
- Max. Operating Junction Temperature (Tj): 150 ?C
- Transition Frequency (ft): 3 MHz
- Forward Current Transfer Ratio (hFE), MIN: 30
- Noise Figure, dB: –
- Package: TO218
- Designed for Complementary Use with the
BD245 Series
? 80 W at 25?C Case Temperature
? 10 A Continuous Collector Current
? 15 A Peak Collector Current
? Customer-Specified Selections Availabl