- Type Designator: BD265
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 40 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 4 A
- Max. Operating Junction Temperature (Tj): 150 ?C
- Transition Frequency (ft): 4 MHz
- Forward Current Transfer Ratio (hFE), MIN: 1000
- Noise Figure, dB: –
- Package: ISO220