BSM100GB120DN2 INFINEON IGBT MODULE

Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 800 W
Package/Case: Half Bridge2
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Height: 30 mm
Length: 106.4 mm
Width: 61.4 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Subcategory: IGBTs