Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 210 A
Gate-Emitter Leakage Current: 320 nA
Pd – Power Dissipation: 1.25 kW
Package/Case: Half Bridge2
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 30 mm
Length: 106.4 mm
Technology: Si
Width: 61.4 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Subcategory: IGBTs
Unit Weight: 363.080 g
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All products are well packed to assure safe delivery.
All products are eligible for free delivery pan India.
Free exchange on all products till 10 days from the date of delivery
