BSM150GB120DN2 INFINEON IGBT MODULE

Technical Specifications

• Manufacturer: Infineon Technologies

• Brand: Infineon

• Model: BSM150GB120DN2

• Part Number: BSM150GB120DN2

• Product Category: IGBT Module

• Technology: Silicon (Si)

• Configuration: Half Bridge

• Maximum Collector-Emitter Voltage (VCEO): 1200 V

• Collector-Emitter Saturation Voltage: 2.5 V

• Continuous Collector Current at 25°C: 210 A

• Gate-Emitter Leakage Current: 320 nA

• Power Dissipation (Pd): 1.25 kW

• Maximum Gate-Emitter Voltage: 20 V

• Minimum Operating Temperature: -40°C

• Maximum Operating Temperature: +150°C

• Package/Case: Half Bridge 2

• Mounting Style: Chassis Mount

• Dimensions: 106.4 × 61.4 × 30 mm (L × W × H)

• Packaging: Tray

• Unit Weight: 363.08 g