*Type Designator: C5198
*Material of Transistor: Si
*Polarity: NPN
*Maximum Collector Power Dissipation (Pc): 100 W
*Maximum Collector-Base Voltage |Vcb|: 160 V
*Maximum Collector-Emitter Voltage |Vce|: 160 V
*Maximum Emitter-Base Voltage |Veb|: 5 V
*Maximum Collector Current |Ic max|: 10 A
*Max. Operating Junction Temperature (Tj): 150 ?C
*Transition Frequency (ft): 30 MHz
*Collector Capacitance (Cc): 220 pF
*Forward Current Transfer Ratio (hFE), MIN: 55
*Noise Figure, dB: –
*Package: TO-3PN