F2807ZS

Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175?C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET? Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175?C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety of other applications.