FB31N20D TO-220

  • Type Designator: FB31N20D
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 200 W
  • Maximum Drain-Source Voltage |Vds|: 200 V
  • Maximum Gate-Source Voltage |Vgs|: 30 V
  • Maximum Drain Current |Id|: 31 A
  • Total Gate Charge (Qg): 70 nC
  • Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
  • Package: TO220AB

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FB31N20D TO-220

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