FDD120AN15AQ

Features

r DS(ON) = 101m (Typ.), VGS = 4A Qg(tot) = 11.2nC (Typ.), = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101

Applications

DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems

DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES SOURCE GATE
MOSFET Maximum Ratings = 25?C unless otherwise noted

Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V) with = 52oC/W Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 9.7 2.8 Figure mJ W W/oC

R JA Thermal Resistance Junction to Case TO-252, TO-220 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-220 (Note 2) Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Device Marking FDD120AN15A0 FDP120AN15A0 Device FDD120AN15A0 FDP120AN15A0 Package TO-252AA TO-220AB Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 50 units

BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current = 250?A, VGS = 120V VGS = 0V VGS ?A nA

VGS(TH) Gate to Source Threshold Voltage VGS = VDS, = 4A, VGS = 10V rDS(ON) Drain to Source On Resistance = 2A, VGS = 4A, VGS 175oC V

CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge = 25V, VGS = 1MHz VGS to 10V VGS to 2V VDD pF nC

tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time = 4A VGS = 10V, RGS ns

VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 4A ISD = 2A ISD = 4A, dISD/dt = 100A/?s ISD = 4A, dISD/dt ns nC

Figure 1. Normalized Power Dissipation vs Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs Case Temperature

PDM t1 t2 NOTES: DUTY FACTOR: = t1/t2 PEAK TJ = PDM x ZJC x RJC t , RECTANGULAR PULSE DURATION (s) 100 101

Figure 3. Normalized Maximum Transient Thermal Impedance
= 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: = I25 VGS TC 150