FDPF33N25T

Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild?s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

• Type Designator: FDPF33N25T
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 37 W
• Maximum Drain-Source Voltage |Vds|: 250 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 33 A
• Maximum Junction Temperature (Tj): 150 ?C
• Total Gate Charge (Qg): 36.8 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.094 Ohm
• Package: TO220F