Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 3.75 V
Continuous Collector Current at 25 C: 370 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1950 W
Package/Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Packaging: Tray
Height: 30.9 mm
Length: 106.4 mm
Technology: Si
Width: 61.4 mm
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
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All products are well packed to assure safe delivery.
All products are eligible for free delivery pan India.
Free exchange on all products till 10 days from the date of delivery
