FGH50T65UPD TO-247

Specifications

Product Attribute	Attribute Value	Search Similar

Product Category:	IGBT Transistors

Technology:	Si
Package/Case:	TO-247
Mounting Style:	Through Hole
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	2.1 V
Maximum Gate Emitter Voltage:	25 V
Continuous Collector Current at 25 C:	100 A
Pd – Power Dissipation:	240 W
Minimum Operating Temperature:	– 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGH50T65UPD
Packaging:	Tube
Brand:	ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:	400 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	450
Subcategory:	IGBTs
Unit Weight:	6.390 g