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FQP34N20

24.00 د.إ40.00 د.إ

Manufacturer ON Semiconductor

Channel Type N

Maximum Continuous Drain Current 31 A

Maximum Drain Source Voltage 200 V

Package Type TO-220AB

Mounting Type Through Hole

Pin Count 3

Maximum Drain Source Resistance 75 m?

Channel Mode Enhancement

Minimum Gate Threshold Voltage 3V

Maximum Power Dissipation 18 W

Transistor Configuration Single

Maximum Gate Source Voltage -30 V, +30 V

Number of Elements per Chip 1

Height 9.4mm

Width 4.7mm

Series QFET

Minimum Operating Temperature -55 ?C

Maximum Operating Temperature +150 ?C

Transistor Material Si

Length 10.1mm

Typical Gate Charge @ Vgs 60 nC @ 10 V

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