Manufacturer ON Semiconductor
Channel Type N
Maximum Continuous Drain Current 31 A
Maximum Drain Source Voltage 200 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 75 m?
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 18 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Height 9.4mm
Width 4.7mm
Series QFET
Minimum Operating Temperature -55 ?C
Maximum Operating Temperature +150 ?C
Transistor Material Si
Length 10.1mm
Typical Gate Charge @ Vgs 60 nC @ 10 V