General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild?s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
? 2.6A, 600V, RDS(on) = 2.2? @VGS = 10 V
? Low gate charge ( typical 15 nC)
? Low Crss ( typical 8.0 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability