FTA04N65 TO-220

‘-Type Designator: FTA04N65

-Type of Transistor: MOSFET

-Type of Control Channel: N -Channel

-Maximum Power Dissipation (Pd): 24 W

-Maximum Drain-Source Voltage |Vds|: 650 V

-Maximum Gate-Source Voltage |Vgs|: 30 V

-Maximum Drain Current |Id|: 4 A

-Maximum Junction Temperature (Tj): 150 ?C

-Rise Time (tr): 21 nS

-Drain-Source Capacitance (Cd): 85 pF

-Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

-Package: TO220F