G4PF50W IGBT

Description:
The G4PF50W is an N-channel IGBT rated at 900V and 51A, housed in a TO-247AC package. With a typical VCEsat of 2.25V and fast 26nS rise time, it’s ideal for high-power switching, motor drive, and industrial power conversion applications

Product Specification:

• Type Designator: G4PF50W
• Manufacturer: International Rectifier
• Device Type: IGBT
• Channel Type: N-Channel
• Max Power Dissipation (Pc): 200W
• Max Collector-Emitter Voltage (VCE): 900V
• Max Gate-Emitter Voltage (VGE): 20V
• Max Collector Current (IC): 51A @ 25°C
• Max Junction Temperature (Tj): 150°C
• Collector-Emitter Saturation Voltage (VCEsat, typ): 2.25V @ 25°C
• Gate-Emitter Threshold Voltage (VGEth, Max): 6V
• Rise Time (tr, typ): 26nS
• Output Capacitance (Coes, typ): 200pF