G4PSC71UD IGBT

The G4PSC71UD IGBT is a high-efficiency Generation 4 insulated gate bipolar transistor from International Rectifier, designed for applications that require fast switching and high power performance.

Part	G4PSC71UD
Description	IRG4PSC71UD
Feature	PD – 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SO.
Manufacture	International Rectifier

Generation G4PSC71UD IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations.

• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
recovery anti-parallel diodes for use in bridge
configurations.

• Industry-benchmark Super-247 package with
higher power handling capability compared to
same-footprint TO-247.

• Creepage distance increased to 5.35 mm.

• Generation G4PSC71UD IGBT offer the highest efficiencies
available.

• Maximum power density, twice the power
handling of TO-247, with less space than TO-264.

• IGBTs optimized for specific application conditions.

• HEXFRED diodes optimized for performance with IGBTs.

• Cost and space saving in designs that require
high power density.