GAL22V10D-DIP

Features
? HIGH PERFORMANCE E2CMOS? TECHNOLOGY
? 4 ns Maximum Propagation Delay
? Fmax = 250 MHz
? 3.5 ns Maximum from Clock Input to Data Output
? UltraMOS? Advanced CMOS Technology
? ACTIVE PULL-UPS ON ALL PINS
? COMPATIBLE WITH STANDARD 22V10 DEVICES
? Fully Function/Fuse-Map/Parametric Compatible
with Bipolar and UVCMOS 22V10 Devices
? 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR
? 90mA Typical Icc on Low Power Device
? 45mA Typical Icc on Quarter Power Device
? E2
CELL TECHNOLOGY
? Reconfigurable Logic
? Reprogrammable Cells
? 100% Tested/100% Yields
? High Speed Electrical Erasure (<100ms)
? 20 Year Data Retention
? TEN OUTPUT LOGIC MACROCELLS
? Maximum Flexibility for Complex Logic Designs
? PRELOAD AND POWER-ON RESET OF REGISTERS
? 100% Functional Testability
? APPLICATIONS INCLUDE:
? DMA Control
? State Machine Control
? High Speed Graphics Processing
? Standard Logic Speed Upgrade
? ELECTRONIC SIGNATURE FOR IDENTIFICATION
? LEAD-FREE PACKAGE OPTIONS
Description
The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently. The generic architecture provides maximum design flexibility by allowing the Output Logic Macrocell (OLMC) to be configured by the user. The GAL22V10 is fully function/fuse map/parametric compatible with standard bipolar and CMOS 22V10 devices. Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are specified