HFA30PB120 TO-247

FEATURES
? Ultrafast and ultrasoft recovery
? Very low IRRM and Qrr
? Designed and qualified according to
? Material categorization:
for definitions of compliance please see

BENEFITS
? Reduced RFI and EMI
? Reduced power loss in diode and switching transistor
? Higher frequency operation
? Reduced snubbing
? Reduced parts count
DESCRIPTION
VS-HFA30PB120… is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200 V and 30 A
continuous current, the VS-HFA30PB120… is especially well
suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED? product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to ?snap-off? during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120… is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed