IRF1010E TO-220 IC

6.00 د.إ

IRF1010 Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


? Advanced process technology

? Ultra low on-resistance

? Dynamic dv/dt rating

? Fast switching

? Fully avalanche rated

? Lead-free

Detailed Specifications:-

Number of Channels1 Channel
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)60V
Continuous Drain Current (Id)84A
Drain-Source Resistance (Rds On)12mOhms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)130 nC
Operating Temperature Range-55 – 150?C
Power Dissipation (Pd)200W

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