IRF1404ZPBF TO-220 IC

This HEXFET? Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of
this design are a 175?C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.

Features

• Advanced Process Technology
• Ultra Low On-Resistance
• 175?C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free