Silcon MosFET Power Transistors
N-Channel
OBSOLETE
Features:
– Single Pulse Avalanche Energy Rated
– SOA is Power Dissipation Limited
– Nanosecond Switching Speeds
– Linear Transfer Characteristics
– High Input Impedance
Drain to Source Voltage: 200V max.
Drain to Gate Voltage (RGS = 20k?): 200V max.
Continuous Drain Current: 5.0A max.
Pulsed Drain Current: 20A max.
Gate to Source Voltage: +/-20V max.
Maximum Power Dissipation: 40W max.
Single Pulse Avalanche Energy Rating: 85mJ
Operating and Storage Temperature: -55 to 150 Degrees C.
Drain to Source On Resistance: 0.8 ohms typ.
Rise/Fall Time: 30ns typ.
Manufactured by: Harris
Part Number: IRF620
For reference only, we are providing a datasheet for this part number. Please note that Harris was acquired by Intersil. West Florida Components assumes no liability for this information.
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All products are eligible for free delivery pan India.
Free exchange on all products till 10 days from the date of delivery
