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irf620 mosfet

15.00 د.إ25.00 د.إ

Additional Information

Silcon MosFET Power Transistors
N-Channel
OBSOLETE

Features:
– Single Pulse Avalanche Energy Rated
– SOA is Power Dissipation Limited
– Nanosecond Switching Speeds
– Linear Transfer Characteristics
– High Input Impedance

Drain to Source Voltage: 200V max.
Drain to Gate Voltage (RGS = 20k?): 200V max.
Continuous Drain Current: 5.0A max.
Pulsed Drain Current: 20A max.
Gate to Source Voltage: +/-20V max.
Maximum Power Dissipation: 40W max.
Single Pulse Avalanche Energy Rating: 85mJ
Operating and Storage Temperature: -55 to 150 Degrees C.
Drain to Source On Resistance: 0.8 ohms typ.
Rise/Fall Time: 30ns typ.

Manufactured by: Harris
Part Number: IRF620

For reference only, we are providing a datasheet for this part number. Please note that Harris was acquired by Intersil. West Florida Components assumes no liability for this information.

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