IRF820 MOSFET

Features:-

? Dynamic dV/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Compliant to RoHS directive 2002/95/EC

Detailed Specifications

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 500V
Continuous Drain Current (Id) 2.5A
Drain-Source Resistance (Rds On) 3Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 17 nC
Operating Temperature Range -65 – 150?C
Power Dissipation (Pd) 50W

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