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IRFBG20 MOSFET

24.00 د.إ40.00 د.إ
  • Type Designator: IRFBG20
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 54 W
  • Maximum Drain-Source Voltage |Vds|: 1000 V
  • Maximum Gate-Source Voltage |Vgs|: 10 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 1.4 A
  • Maximum Junction Temperature (Tj): 150 ?C
  • Total Gate Charge (Qg): 38 nC
  • Maximum Drain-Source On-State Resistance (Rds): 11 Ohm

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