- Type Designator: IRFBG20
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 54 W
- Maximum Drain-Source Voltage |Vds|: 1000 V
- Maximum Gate-Source Voltage |Vgs|: 10 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 1.4 A
- Maximum Junction Temperature (Tj): 150 ?C
- Total Gate Charge (Qg): 38 nC
- Maximum Drain-Source On-State Resistance (Rds): 11 Ohm
