irfp250n mosfet

Features:-

? Advanced process technology

? Dynamic dv/dt rating

? Fast switching

? Fully avalanche rated

? Ease of paralleling

? Simple drive requirements

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 30A
Drain-Source Resistance (Rds On) 0.075Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 123 nC
Operating Temperature Range -55 – 175?C
Power Dissipation (Pd) 214W

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