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IRFP260N TO-247

45.00 د.إ70.00 د.إ

IRFP260N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


? Dynamic dV/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 50A
Drain-Source Resistance (Rds On) 0.04Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 234 nC
Operating Temperature Range -55 – 150?C
Power Dissipation (Pd) 300W

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