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IRFP260N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 50A |
| Drain-Source Resistance (Rds On) | 0.04Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 234 nC |
| Operating Temperature Range | -55 – 150?C |
| Power Dissipation (Pd) | 300W |
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All products are well packed to assure safe delivery.
All products are eligible for free delivery pan India.
Free exchange on all products till 10 days from the date of delivery
