| Transistor Polarity | N |
| Maximum Drain Source Voltage | 60 V |
| Maximum Continuous Drain Current | 30 A |
| Maximum Gate Source Voltage | ?20V |
| Maximum Power Dissipation | 68 W |
| Number of Elements per Chip | 1 |
| Peak Forward Voltage | 60VDC |
| Output Power | 88W |
| Peak Non-Repetitive Surge Current | 120A |
| Peak Reverse Current | 25uA |
| Channel Mode | N-Channel Enhancement |
| Peak Reverse Recovery Time | 100ns |
| Channel Type | N |
| Peak Reverse Repetitive Voltage | 60VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 0.04?Ohms@10V |
| Category | Power MOSFET |
| Maximum Continuous Forward Current | 30A |
| Typical Fall Time | 40ns |
| Typical Gate Charge @ Vgs | 34nC @10V |
| Typical Input Capacitance @ Vds | 700pF@25V |
| Typical Rise Time | 49ns |
| Typical Turn-Off Delay Time | 31ns |
| Typical Turn-On Delay Time | 7ns |
| Minimum Operating Temperature | -55?C |
| Maximum Operating Temperature | 175?C |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pin_Count | 3 |
| Family | IRFZ34 |
| Product Width | 4.69mm |
| Product Height | 8.77mm |
| Product Length | 10.54mm |
| Product Type | MOSFET |
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IRFZ34N Mosfet TO-220
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MOSFET N-Channel 60V 30A (Tc) 88W (Tc) Through Hole TO-220AB
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance and low package cost contribute to its wide acceptance throughout the industry.
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| pack | pack of 3, pack of 5 |
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