IRFZ46N Mosfet

Descriptions:

Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

VDSS = 55V
RDS(on) = 16.5mO
ID = 53A

• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 88 W
• Maximum Drain-Source Voltage |Vds|: 55 V
• Maximum Gate-Source Voltage |Vgs|: 10 V
• Maximum Drain Current |Id|: 46 A
• Maximum Junction Temperature (Tj): 150 ?C
• Total Gate Charge (Qg): 48 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
• Package: TO220AB