MJE1100 IC

12.00 د.إ
  • Type Designator: MJE1100
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 70 W
  • Maximum Collector-Base Voltage |Vcb|: 60 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 5 A
  • Max. Operating Junction Temperature (Tj): 150 ?C
  • Transition Frequency (ft): 4 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 750
  • Noise Figure, dB: –
  • Package: TO126

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