? Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25?C)
? Built in fast recovery diode in one package
? Trench gate and thin wafer technology
? High speed switching
tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25?C, inductive load)
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