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RJP30H2A TO-263

8.00 د.إ

Features
? Trench gate and thin wafer technology (G6H-II series)
? Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
? High speed switching: tf = 100 ns typ, tf = 180 ns typ
? Low leak current: ICES = 1 ?A max

Collector to Emitter voltage VCES 360 V
Gate to Emitter voltage VGES ?30 V
Collector current Ic 35 A
Collector peak current ic(peak) Note1 250 A
Collector dissipation PC
Note2 60 W
Junction to case thermal impedance ?j-c 2.08 ?C/ W
Junction temperature Tj 150 ?C
Storage temperature Tstg ?55 to +150 ?C

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