The SKM100GB12T4 IGBT module is a high-power semiconductor device featuring a half-bridge configuration and IGBT 4 Fast trench technology. With a 1.2 kV collector-emitter voltage rating and 160 A DC collector current, it is designed for high-power switching applications in industrial power electronics and motor control systems.
Model: SKM100GB12T4
Part Number: SKM100GB12T4
IGBT Configuration: Half Bridge
DC Collector Current: 160 A
Collector-Emitter Saturation Voltage (Vce(on)): 1.8 V
Collector-Emitter Voltage (V(br)ceo): 1.2 kV
IGBT Technology: IGBT 4 Fast (Trench)
Transistor Case Style: Module
IGBT Termination: Stud
Maximum Junction Temperature (Tj): 175°C
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Nunc at vehicula nulla.
Lorem ipsum dolor sit amet, consectetur adipiscing elit. Nunc at vehicula nulla.
All products are well packed to assure safe delivery.
All products are eligible for free delivery pan India.
Free exchange on all products till 10 days from the date of delivery
