| Channel Type | N |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 550 m? |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 9.15mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V |
| Series | MDmesh, SuperMESH |
| Length | 10.4mm |
| Maximum Operating Temperature | +150 ?C |
| Width | 4.6mm |
| Minimum Operating Temperature | -55 ?C |
