SW7472N DIP IC

Description:
This N-Channel Power MOSFET is manufactured using advanced VDMOS planar stripe process technology, delivering superior performance characteristics including fast switching time, low on-resistance, low gate charge, and excellent avalanche capability. Rated for 400V (BVDSS) and 10A drain current, it is ideally suited for half-bridge and full-bridge resonant topologies such as electronic ballasts, as well as low-power switching mode power appliances requiring efficient, reliable operation.

Product Specification:

• Device Type: N-Channel Power MOSFET
• Process Technology: VDMOS, Planar Stripe
• BVDSS (Minimum): 400V
• RDS(ON) (Maximum): 0.55 ohm
• ID (Drain Current): 10A
• Qg (Typical Gate Charge): 45 nC
• PD (@TC=25°C): 134W
• Applications: Electronic ballasts, half/full bridge resonant topology, low-power SMPS appliances