General Description
This power MOSFET is produced with advanced
VDMOS process, planar stripe.This technology
enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low
gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or
full bridge resonant topology like a electronic ballast,
and also low power switching mode power appliances
Features
N-Channel MOSFET
* BVDSS (Minimum)? ? ? ? ?: 400 V
* RDS(ON) (Maximum)? ? : 0.55 ohm
* ID? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? : 10A
* Qg (Typical)? ? ? ? ? ? ? ? ? ? ? : 45 nc
* PD(@TC=25 )? ? ? ? ? ? ? ? ? ?: 134 W